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 TN0601L, VN0606L, VN66AFD
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN0601L VN0606L VN66AFD 60
V(BR)DSS Min (V)
rDS(on) Max (W)
1.8 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V
VGS(th) (V)
0.5 to 2 0.8 to 2 0.8 to 2.5
ID (A)
0.47 0.33 1.46
FEATURES
D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage
BENEFITS
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays
TO-226AA (TO-92)
S 1
Device Marking Front View TN0601L "S" TN 0601L xxyy VN0606L S
TO-220SD (Tab Drain)
1 Device Marking Front View VN66AFD G 2 VN66AFD "S" xxyy "S" = Siliconix Logo xxyy = Date Code Top View VN66AFD
G
2
D
3
"S" VN 0606L xxyy "S" = Siliconix Logo xxyy = Date Code
D
3
Top View TN0601L VN0606L
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Document Number: 70201 S-04279--Rev. E, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS VGS ID IDM PD RthJA RthJC TJ, Tstg
TN0601L
60 "20 0.47 0.29 1.5 0.8 0.32 156
VN0606L
60 "30 0.33 0.21 1.6 0.8 0.32 156
VN66AFDb
60 "30 1.46 0.92 3 15 6
Unit
V
A
W
8.3 -55 to 150
_C/W _ _C
11-1
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TN0601L VN0606L VN66AFD
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)DSS VGS(th)
VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "30 V
70 1.6 1.7
60 0.5 2
60
60 V
0.8
2 "100
0.8
2.5 "100 "500 nA
Gate-Body Leakage
IGSS
TC = 125_C VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V TJ = 125_C "10 10 500 1 100
Zero Gate VoltageDrain Current
IDSS
VDS = 48 V, VGS = 0 V TJ = 125_C TC = 125_C
1
m mA
10 0.5 2.4 4 2 3.8 2.3 1.2 2.3 1.3 2.5 350 0.3 200 170 170 mS 1.8 3 6 3 6 0.25 1 5 3 6 5 W 1.5 1.5 A
On-State Drain Currentb
VDS = 10 V, VGS = 4.5 V ID(on) VDS = 10 V, VGS = 10 V VGS = 3.5 V, ID = 0.04 A VGS = 4.5 V, ID = 0.25 A TJ = 125_C
Drain-Source On-Resistanceb
VGS = 5 V, ID = 0.3 A rDS(on) VGS = 10 V, ID = 0.5 A TJ = 125_C VGS = 10 V, ID = 1 A TC = 125_C
Forward Transconductanceb Common Source Output Conductanceb
gfs gos
VDS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.1 A
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 35 25 6 60 50 10 50 40 10 50 40 10 pF
Switchingc
Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W 8 9 15 15 10 10 15 ns 15 VNDQ06
Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v 300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
Document Number: 70201 S-04279--Rev. E, 16-Jul-01
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0 VGS = 10 V 1.6 6V 1.2 5V 0.8 4V 0.4 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) ID - Drain Current (mA) ID - Drain Current (A) 8V 7V 80 2.6 V 60 100
Output Characteristics for Low Gate Drive
VGS = 10 V 2.8 V
40
2.4 V
2.2 V 20 2.0 V 1.8 V
Transfer Characteristics
1.0 TJ = -55_C VDS = 15 V 125_C ID - Drain Current (A) 0.6 2.8 25_C 2.4 0.8 rDS(on) - On-Resistance ( ) 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) 0 0
On-Resistance vs. Gate-to-Source Voltage
1.0 A
0.5 A
0.4
ID = 0.1 A
0.2
4
8
12
16
20
VGS - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
2.5 rDS(on) - Drain-Source On-Resistance ( ) rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.25
Normalized On-Resistance vs. Junction Temperature
VGS = 10 V 2.00 I D = 1.0 A 1.75 0.2 A 1.50 1.25 1.00 0.75 0.50
2.0
1.5
VGS = 10 V
1.0
0.5
0 0 0.4 0.8 1.2 1.6 2.0
-50
-10
30
70
110
150
ID - Drain Current (A)
TJ - Junction Temperature (_C)
Document Number: 70201 S-04279--Rev. E, 16-Jul-01
www.vishay.com
11-3
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10 VDS = 5 V 100 TJ = 150_C ID - Drain Current (mA) 1 C - Capacitance (pF) 80 120 VGS = 0 V f = 1 MHz
Capacitance
60 C iss C oss 20 C rss 0
25_C 0.1
40
125_C 0.01 0.5 1.0 1.5
-55_C 2.0 0 10 20 30
40
50
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Gate Charge
15.0 I D = 1.0 A VGS - Gate-to-Source Voltage (V) 12.5 VDS = 30 V t - Switching Time (ns) 50 100
Load Condition Effects on Switching
VDD = 25 V RG = 25 W VGS = 0 to 10 V
10.0
20 10 td(off) 5 tr td(on) 2 1 tf
7.5
5.0
VDS = 48 V
2.5
0 0 100 200 300 400 500 600 Qg - Total Gate Charge (pC)
0.1
1 ID - Drain Current (A)
10
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM
0.01 Single Pulse 0.01 0.1 0.5 1 5 10 50 100 500
2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t)
1K
5K
10 K
t1 - Square Wave Pulse Duration (sec)
www.vishay.com
11-4
Document Number: 70201 S-04279--Rev. E, 16-Jul-01


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